RECRYSTALLIZATION OF AMORPHOUS-SILICON ON INSULATOR

The structure and morphology as well as the etch velocity of silicon o n silicon nitride are studied prior to and after zone melting recrysta llization by observing the transmission electron micrographs and diffr action patterns. It is found that the experimental results depend on t he presence of a channel as a starting area of recrystallization, and monocrystals of good quality are obtained using a channel width of 0.3 mm. The etch velocity of such silicon layer is 1150 Angstrom min(-1), which is the lowest in comparison with results obtained using other c hannel widths.