200-DEGREES-C OPERATION OF SEMICONDUCTOR POWER DEVICES

There is a growing need for commercial and military power electronics to operate above 175-degrees-C. Changes in operating parameters at 200 -degrees-C have been measured for four devices, an N-P-N bipolar junct ion transistor (BJT), an insulated gate bipolar transistor (IGBT), an N-channel metal-oxide-semiconductor field effect transistor (MOSFET), and a P-type MOS controlled thyristor (MCT). Using the results of thes e measurements, power supplies have been built using IGBT's and MOSFET 's and operated at an ambient temperature of 200-degrees-C for up to 7 2 h.