Mi. Larsson et Gv. Hansson, METHOD USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY TODETERMINE THE SOLID SOLUBILITY LIMIT FOR BORON IN SILICON AND SI1-XGEX LAYERS, Journal of crystal growth, 134(3-4), 1993, pp. 203-210
Reflection high-energy electron diffraction (RHEED) intensity measurem
ents have been used as a new in situ method to determine the apparent
B solid solubility in Si1-xGex(x greater-than-or-equal-to 0) during mo
lecular beam epitaxy. An increasing solid solubility of B with Ge conc
entration support a strain compensating effect of Ge codeposited with
B. It is shown that B incorporation at very high doping concentrations
cannot be explained by conventional dopant incorporation theory, but
it fits a zeroth order incorporation model. The RHEED intensity result
s are supported by Auger electron spectroscopy (AES) studies.