LATERAL AND VERTICAL ISOLATION BY ARSENIC IMPLANTATION INTO MOCVD-GROWN GAAS-LAYERS

We have demonstrated the formation of arsenic precipitates in GaAs usi ng arsenic implantation and annealing. Electrical measurements show th at very high resistivity (surface or buried) GaAs layers can be produc ed by this method. The arsenic-implanted materials are similar to GaAs :As buffer layers grown by low-temperature molecular beam epitaxy, whi ch are used for eliminating backgating problems in GaAs circuits. Arse nic implantation is a nonepitaxial process which is compatible with cu rrent GaAs technology. Formation of insulating GaAs layers by this tec hnique may improve the performance and packing density of GaAs integra ted circuits, leading to advanced novel III-V compound-based technolog ies for high-speed and radiation-hard circuits.