HIGH-RESISTIVITY LT-IN(0.47)GA(0.53)P GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Low-temperature (LT) growth of In0.47Ga0.53P was carried out in the te mperature range from 200 to 260 degrees C by gas source molecular beam epitaxy using solid Ga and In and precracked PH3. The Hall measuremen ts of the as-grown film showed a resistivity of similar to 10(6) Omega -cm at room temperature whereas the annealed film (at 600 degrees C fo r 1 h) had at least three orders of magnitude higher resistivity. The Hall measurements, also, indicated activation energies of similar to 0 .5 and 0.8 eV for the as-grown and annealed samples, respectively. Dou ble-crystal x-ray diffraction showed that the LT-InGaP films had simil ar to 47% In composition. The angular separation, Delta theta, between the GaAs substrate and the as-grown LT-InGaP film on (004) reflection was increased by 20 arc-s after annealing. In order to better underst and the annealing effect, a LT-InGaP film was grown on an InGaP film g rown at 480 degrees C. While annealing did not have any effect on the HT-InGaP peak position, the LT-InGaP peak was shifted toward the HT-In GaP peak, indicating a decrease in the LT-InGaP lattice parameter. Cro ss-sectional transmission electron microscopy indicates the presence o f phase separation in LT-InGaP films, manifested in the form of a ''pr ecipitate-like'' microstructure. The analytical scanning transmission electron microscopy analysis of the LT-InGaP film revealed a group-V n onstoichiometric deviation of similar to 0.5 at.% P. To our knowledge, this is the first report about the growth and characterization of LT- InGaP films.