AN ANALYSIS OF A SEMICONDUCTOR EXPERIMENT USING YIELD AND SPATIAL INFORMATION

Citation
Jg. Ramirez et B. Cantell, AN ANALYSIS OF A SEMICONDUCTOR EXPERIMENT USING YIELD AND SPATIAL INFORMATION, Quality and reliability engineering international, 13(1), 1997, pp. 35-46
Citations number
20
Categorie Soggetti
Engineering
ISSN journal
07488017
Volume
13
Issue
1
Year of publication
1997
Pages
35 - 46
Database
ISI
SICI code
0748-8017(1997)13:1<35:AAOASE>2.0.ZU;2-S
Abstract
Semiconductor yield data is binary by nature since an integrated circu it (IC), or die, can only pass or fail a particular test. Still, many people rely on simple linear regression to analyse this type of data, which can produce incorrect results, e.g. negative yield predictions. We discuss the use of logistic regression for the analysis of yield da ta, and show that even this approach has to be modified to take into a ccount the phenomenon of overdispersion. We present several approaches to accommodate overdispersion. We also discuss a statistic for measur ing the spatial dependence of ICs within a wafer, the spatial log-odds ratio, which provides additional information to complement a yield an alysis. These ideas are demonstrated using an example from our manufac turing area. (C) 1997 by John Wiley & Sons, Ltd.