IN-SITU DOMAIN MULTIPLICATION AND MIGRATION IN THE ANTIFERROELECTRIC CERAMIC PLSNZT

The domain structures of an antiferroelectric perovskite in the system (Ph, La)(Zr, Sn, Ti)O-3 have been examined over a range of length sca les by TEM. The structure consists of multiple orientation variants of a long range incommensurate modulation running along one of the < 110 > directions with an approximate wavelength 9a/root 2. The incommensu rate modulation gives rise to several characteristic patterns of contr ast. Beam-induced charging causes domain wall migration in specimens w ith an incomplete conductive coating. In one instance, a novel regener ative domain source was observed.