PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY IN SAL-601 RESISTS ON A SI-SIO2-SI SUBSTRATE

Authors
OUABBOU A MARTINEZ JP LALANNE F GERARD P BALLADORE JL
Citation
A. Ouabbou et al., PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY IN SAL-601 RESISTS ON A SI-SIO2-SI SUBSTRATE, Microelectronic engineering, 20(4), 1993, pp. 255-275
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
20
Issue
4
Year of publication
1993
Pages
255 - 275
Database
ISI
SICI code
0167-9317(1993)20:4<255:PEIELI>2.0.ZU;2-B
Abstract
A computer software is developed for calculation of the energy density distribution in the SAL 601 resist. In the case of a point source ele ctron beam both lateral and depth evolution of the energy deposition a re determined. Simulation of a line source is then achieved. Different geometries are modelled; the equidensity energy contours are obtained . The proximity effects are studied notably for isolated lines and arr ays of lines and spaces.