PROPERTIES OF MOSE2 THIN-FILMS OBTAINED BY SOLID-STATE REACTIONS BETWEEN THIN-FILMS AND BY DC DIODE SPUTTERING

Authors
POUZET J BERNEDE JC
Citation
J. Pouzet et Jc. Bernede, PROPERTIES OF MOSE2 THIN-FILMS OBTAINED BY SOLID-STATE REACTIONS BETWEEN THIN-FILMS AND BY DC DIODE SPUTTERING, Materials chemistry and physics, 36(3-4), 1994, pp. 304-308
Citations number
20
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
36
Issue
3-4
Year of publication
1994
Pages
304 - 308
Database
ISI
SICI code
0254-0584(1994)36:3-4<304:POMTOB>2.0.ZU;2-4
Abstract
MoSe2 layers obtained by d.c. diode sputtering and by solid state reac tions between Mo and Se or Te thin films have been investigated by X-r ay analysis, transmission electron microscopy (TEM), X-ray photoelectr on spectroscopy (XPS) analysis, optical absorption and electrical resi stivity measurements. In this paper, we present a summary and a compar ison of the layers' properties.