PRECIPITATE STRAIN RELIEF VIA POINT-DEFECT INTERACTION - MODELS FOR SIO2 IN SILICON (VOL 34, PG 166, 1993)

Authors
TAYLOR WJ GOSELE UM TAN TY
Citation
Wj. Taylor et al., PRECIPITATE STRAIN RELIEF VIA POINT-DEFECT INTERACTION - MODELS FOR SIO2 IN SILICON (VOL 34, PG 166, 1993), Materials chemistry and physics, 36(3-4), 1994, pp. 389-389
Citations number
1
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
36
Issue
3-4
Year of publication
1994
Pages
389 - 389
Database
ISI
SICI code
0254-0584(1994)36:3-4<389:PSRVPI>2.0.ZU;2-4