For a reliable function of high-power GTOs it is important that indivi
dual parallel-connected segments of a GTO structure are nearly of the
same characteristics, both static and dynamic. The presented paper dea
ls with the study of electron irradiation influencing the carrier life
time and decreasing the relative dispersion of the carrier lifetime on
the area of power GTO. Theoretical presumptions were experimentally v
erified by measuring of current gain distribution in large-area GTOs b
efore and after different electron irradiation doses.