IMPROVING OF LARGE-AREA GTO HOMOGENEITY BY ELECTRON-IRRADIATION

Citation
V. Benda et al., IMPROVING OF LARGE-AREA GTO HOMOGENEITY BY ELECTRON-IRRADIATION, Microelectronics and reliability, 34(1), 1994, pp. 23-29
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00262714
Volume
34
Issue
1
Year of publication
1994
Pages
23 - 29
Database
ISI
SICI code
0026-2714(1994)34:1<23:IOLGHB>2.0.ZU;2-W
Abstract
For a reliable function of high-power GTOs it is important that indivi dual parallel-connected segments of a GTO structure are nearly of the same characteristics, both static and dynamic. The presented paper dea ls with the study of electron irradiation influencing the carrier life time and decreasing the relative dispersion of the carrier lifetime on the area of power GTO. Theoretical presumptions were experimentally v erified by measuring of current gain distribution in large-area GTOs b efore and after different electron irradiation doses.