REPAIR TECHNIQUE FOR PHASE-SHIFTING MASKS USING SILICON-CONTAINING RESIST

Authors
WATANABE H SUGIURA E IMORIYA T TODOKORO Y INOUE M
Citation
H. Watanabe et al., REPAIR TECHNIQUE FOR PHASE-SHIFTING MASKS USING SILICON-CONTAINING RESIST, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2211-2215
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
12
Year of publication
1993
Pages
2211 - 2215
Database
ISI
SICI code
0018-9383(1993)40:12<2211:RTFPMU>2.0.ZU;2-W
Abstract
A novel repair technique for shifter defects on phase shifting masks i s described. It is based on the spin-coating of silicon-containing res ist on the entire mask, electron beam exposure, and development. The n ewly developed repair technique is quite simple because it does not re quire the deposition or removal of shifter materials. Both intrusion a nd extrusion shifter defects have been successfully repaired.