THE DEGRADATION OF TDDB CHARACTERISTICS OF SIO2 SI3N4/SIO2 STACKED FILMS CAUSED BY SURFACE-ROUGHNESS OF SI3N4 FILMS/

Authors
TANAKA H UCHIDA H AJIOKA T HIRASHITA N
Citation
H. Tanaka et al., THE DEGRADATION OF TDDB CHARACTERISTICS OF SIO2 SI3N4/SIO2 STACKED FILMS CAUSED BY SURFACE-ROUGHNESS OF SI3N4 FILMS/, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2231-2236
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
12
Year of publication
1993
Pages
2231 - 2236
Database
ISI
SICI code
0018-9383(1993)40:12<2231:TDOTCO>2.0.ZU;2-5
Abstract
The effect of surface roughness of Si3N4 films on TDDB characteristics of SiO2/Si3N4/SiO2 (ONO) stacked films was investigated. The surface roughness of Si3N4 films was found to become higher with increasing th e deposition temperature and to cause the degradation of TDDB characte ristics of ONO films. A local thinning of ONO films, evaluated from th e TDDB characteristics, agreed with the surface roughness measured by AFM add XTEM. Dependence of time to breakdown of ONO films on the depo sition conditions was interpreted by electric field intensification du e to the surface roughness of Si3N4 films.