A BIDIRECTIONAL NMOSFET CURRENT REDUCTION MODEL FOR SIMULATION OF HOT-CARRIER-INDUCED CIRCUIT DEGRADATION

In this paper, we present a new approach for modeling hot-electron ind uced change in drain current. The new approach significantly improves the ease of parameter extraction and provides new capabilities for mod eling the effect of bidirectional stressing and the asymmetrical I-V c haracteristics after stressing. The change in drain current, Delta I-D is implemented as an asymmetrical voltage controlled current source a nd the new Delta I-D model is independent of the MOSFET model used for circuit simulation. The physical basis of the model, the analytical m odel equations, the implementation scheme in BERT (BErkeley Reliabilit y Tools) simulator and simulation results of uni- and bidirectional ci rcuit stressing based on the new model are presented.