HIMOS - A HIGH EFFICENCY FLASH E(2)PROM CELL FOR EMBEDDED MEMORY APPLICATIONS

Authors
VANHOUDT J HASPESLAGH L WELLEKENS D DEFERM L GROESENEKEN G MAES HE
Citation
J. Vanhoudt et al., HIMOS - A HIGH EFFICENCY FLASH E(2)PROM CELL FOR EMBEDDED MEMORY APPLICATIONS, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2255-2263
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
12
Year of publication
1993
Pages
2255 - 2263
Database
ISI
SICI code
0018-9383(1993)40:12<2255:H-AHEF>2.0.ZU;2-D
Abstract
This paper describes a novel Flash E(2)PROM device, which is programme d with a highly efficient hot-electron injection mechanism. The High I njection MOS (HIMOS) device combines a very high programming speed at 5-V-only operation with a low development entry cost, which renders it a highly attractive concept for embedded memory applications. The HIM OS concept exhibits complete soft-write immunity and the possibility o f overerasure without causing any problem in a memory architecture. Fu rthermore, it is shown that this device can also operate with a 3.3-V voltage supply, which is of a major importance for the nest generation s of submicron Flash E(2)PROM technologies.