A METHOD OF ELIMINATING B-MODE DIELECTRIC-BREAKDOWN FAILURE IN GATE OXIDES UTILIZING A CHARGING PHENOMENON

Authors
AJIOKA T NARA A TOMINAGA Y USHIKOSHI T KITABAYASHI H
Citation
T. Ajioka et al., A METHOD OF ELIMINATING B-MODE DIELECTRIC-BREAKDOWN FAILURE IN GATE OXIDES UTILIZING A CHARGING PHENOMENON, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2282-2286
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
12
Year of publication
1993
Pages
2282 - 2286
Database
ISI
SICI code
0018-9383(1993)40:12<2282:AMOEBD>2.0.ZU;2-N
Abstract
The dielectric breakdown characteristics of charged samples were inves tigated. B-mode dielectric breakdown failure was eliminated by scrubbi ng gate oxide films using a brush. Various scrubbing experiments revea led that this occurred due to charging to a voltage close to the intri nsic breakdown voltage of the gate oxide film. Other characteristics s uch as C-V curves and time dependent dielectric breakdown characterist ics were not degraded by the charging. The method can be of value in t he manufacture of reliable oxide films in ULSI