PREDICTION OF IMPACT-IONIZATION-INDUCED SNAP-BACK IN ADVANCED SI N-P-N BJTS BY MEANS OF A NONLOCAL ANALYTICAL MODEL FOR THE AVALANCHE MULTIPLICATION FACTOR

Authors
VERZELLESI G BACCARANI G CANALI C PAVAN P VENDRAME L ZANONI E
Citation
G. Verzellesi et al., PREDICTION OF IMPACT-IONIZATION-INDUCED SNAP-BACK IN ADVANCED SI N-P-N BJTS BY MEANS OF A NONLOCAL ANALYTICAL MODEL FOR THE AVALANCHE MULTIPLICATION FACTOR, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2296-2300
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
12
Year of publication
1993
Pages
2296 - 2300
Database
ISI
SICI code
0018-9383(1993)40:12<2296:POISIA>2.0.ZU;2-Z
Abstract
Assuming a triangular shape for the electric field in the base-collect or space-charge region of an n-p-n Si BJT enables the electron mean en ergy to be calculated analytically from a simplified energy-balance eq uation. On this basis a nonlocal impact-ionization model, suitable for computer-aided circuit simulation, has been obtained and used to calc ulate the output characteristics at constant emitter-base voltage (gro unded base) of advanced devices. Provided the experimental bias-depend ent value of the base parasitic resistance is accounted for in the dev ice model, the base-collector voltage at which impact-ionization-induc ed snap-back occurs can be accurately predicted.