THE INVERSION LAYER OF SUBHALF-MICROMETER N-CHANNEL AND P-CHANNEL MOSFETS IN THE TEMPERATURE-RANGE 208-403-K

Minority carrier mobility has been extracted from I-V measurements on N- and PMOS-transistors entirely processed by means of X-ray lithograp hy with effective channel lengths down to 0.35 mu m. The measurements have been performed within the temperature range 208-403 K (-65 degree s C to + 130 degrees C). The accuracy of the mobility determination ha s been investigated, especially with regard to the determination of th e effective channel length and the series resistance. The results indi cate a significant mobility reduction for short-channel NMOS-devices a t temperatures below 300 K. Furthermore, a slight increase of the thre shold-voltage was observed in the short-channel region. Both effects c an be required by an inhomogeneous lateral doping profile within the c hannel due to standard submicron technology, which was confirmed with two-dimensional device simulation.