SELECTIVE GROWTH OF GAAS INGAP HETEROSTRUCTURES BY PHOTO-ENHANCED ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION

Authors
MAAYAN E KREININ O BAHIR G SALZMAN J EYAL A BESERMAN R
Citation
E. Maayan et al., SELECTIVE GROWTH OF GAAS INGAP HETEROSTRUCTURES BY PHOTO-ENHANCED ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 135(1-2), 1994, pp. 23-30
Citations number
19
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
135
Issue
1-2
Year of publication
1994
Pages
23 - 30
Database
ISI
SICI code
0022-0248(1994)135:1-2<23:SGOGIH>2.0.ZU;2-N
Abstract
Selective epitaxial growth of GaAs on GaAs and In0.49Ga0.51P surfaces, using photo-enhanced organometallic chemical vapor deposition, was in vestigated. The growth rate dependence on illumination intensity, trim ethylgallium partial pressure, and temperature is reported. In-situ pa tterning and three-dimensional shaping during growth of GaAs/InGaP bur ied heterostructures, are demonstrated. The experimental results are i n good agreement with a simple model, in which the decomposition of ad sorbed trimethylgallium is assisted by surface recombination of photo- excited free carriers.