UNUSUAL STRAIN IN HOMOEPITAXIAL CDTE(001) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

Citation
H. Heinke et al., UNUSUAL STRAIN IN HOMOEPITAXIAL CDTE(001) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 135(1-2), 1994, pp. 53-60
Citations number
32
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
135
Issue
1-2
Year of publication
1994
Pages
53 - 60
Database
ISI
SICI code
0022-0248(1994)135:1-2<53:USIHCL>2.0.ZU;2-A
Abstract
For homoepitaxial CdTe(001) films grown by molecular beam epitaxy onto CdTe(001) substrates, a difference between the lattice constants of t he substrate and the layer was systematically observed using high reso lution X-ray diffraction. Reciprocal space maps point out an unusual s train state of such layers which is indicated by the position of their reciprocal lattice points. They lie in a section of reciprocal space which is usually forbidden by elasticity theory. The strain is lateral ly anisotropic leading to a monoclinic symmetry of the thin films. The lateral strain is depth dependent. Possible reasons for the formation of the unusual strain are discussed, and a correlation of the unusual strain with the growth conditions is attempted.