GROWTH OF ALUMINUM FILMS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION USING TRITERTIARYBUTYLALUMINIUM

Authors
JONES AC AULD J RUSHWORTH SA CRITCHLOW GW
Citation
Ac. Jones et al., GROWTH OF ALUMINUM FILMS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION USING TRITERTIARYBUTYLALUMINIUM, Journal of crystal growth, 135(1-2), 1994, pp. 285-289
Citations number
26
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
135
Issue
1-2
Year of publication
1994
Pages
285 - 289
Database
ISI
SICI code
0022-0248(1994)135:1-2<285:GOAFBL>2.0.ZU;2-F
Abstract
The new aluminium precursor, tritertiarybutylaluminium (TTBA), has bee n used successfully for the growth of high purity aluminium films by l ow pressure chemical vapour deposition (LPCVD). The aluminium films we re grown over the temperature range 300-450-degrees-C on Si(111) subst rates and had growth rates of up to 2 mum min-1. A comparison with alu minium films grown using triisobutylaluminium (TIBA) is made.