STUDY OF LOW TE-DOPED GASB SINGLE-CRYSTALS

The distribution of tellurium concentration in [111] GaSb single cryst als grown using the Czochralski method without encapsulant in an atmos phere of flowing hydrogen was studied. No facets were formed in undope d GaSb, while in the case of Te-doped crystals the facets have appeare d at the centre of the GaSb bowl. The formation of facets is dependent on the temperature conditions in the growth surface (its shape) and o n the level and the nonhomogeneity of dopant concentration near to the growth interface. It follows that it is difficult to grow single crys tals which would have a homogeneous concentration of tellurium in the grown plane of [111] GaSb.