THERMAL ANNEALING OF LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE

Authors
ALEXIEV D BUTCHER KSA EDMONDSON M TANSLEY TL
Citation
D. Alexiev et al., THERMAL ANNEALING OF LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE, Journal of crystal growth, 135(1-2), 1994, pp. 367-369
Citations number
4
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
135
Issue
1-2
Year of publication
1994
Pages
367 - 369
Database
ISI
SICI code
0022-0248(1994)135:1-2<367:TAOLEG>2.0.ZU;2-R
Abstract
Thermal annealing of n-type liquid phase epitaxial gallium arsenide is examined. It is shown that low 10(15) CM-3 n-type electrically active impurity levels can be reduced to 3 x 10(13) CM-3 by long term anneal ing. Conversely, it is also shown that p-type liquid phase epitaxial ( LPE) gallium arsenide when thermally annealed will show an increase in the net acceptor density. A mechanism for this effect is proposed.