ELECTRICAL-PROPERTIES AND COMPOSITIONAL DISTRIBUTIONS OF CVT AND PVT GROWN HG1-XCDXTE EPILAYERS

Epitaxial layers of Hg1-xCdxTe were grown on CdTe substrates by the ch emical vapor transport technique using HgI2, as a transport agent. The epilayers were of nearly uniform composition both laterally and to a depth of about one-half of the layer thickness. By comparison, the com position varied continuously throughout the depth of the layer for epi layers grown by the physical vapor transport technique. Layers were gr own both p- and n-type with carrier concentrations on the order of 10( 17) cm(-3). Low-temperature annealing was used to convert the p-type l ayers into n-type. The room-temperature carrier mobilities of as-grown and converted n-type layers ranged from 10(3) to 10(4) cm(2)/V-s depe nding on the composition and are comparable to previous literature val ues for undoped Hg1-xCdxTe crystals.