GROWTH OF SILICON-NITRIDE BY SCANNED PROBE LITHOGRAPHY

Authors
PYLE JL RUSKELL TG WORKMAN RK YAO XW SARID D
Citation
Jl. Pyle et al., GROWTH OF SILICON-NITRIDE BY SCANNED PROBE LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 38-39
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
1
Year of publication
1997
Pages
38 - 39
Database
ISI
SICI code
1071-1023(1997)15:1<38:GOSBSP>2.0.ZU;2-P
Abstract
Scanning probe lithography has been used for the first time to grow si licon nitride nanostructures on silicon substrates. The Lithography wa s performed by an atomic force microscope (AFM) placed in an evacuated chamber with a partial pressure of annhydrous ammonia. The silicon ni tride nanostructures were grown by negatively biasing the silicon tip with respect to the sample. By changing the environment of the AFM, bo th silicon oxide and silicon nitride can be grown and subsequently pro cessed. (C) 1997 American Vacuum Society.