DEVELOPMENT OF A WAFER LEVEL TECHNIQUE FOR MONITORING AND CONTROL OF DEPOSITION TEMPERATURE IN HIGH-VACUUM PHYSICAL VAPOR-DEPOSITION TECHNOLOGY

Authors
WILSON R HULSEWEH T KROLIKOWSKI W
Citation
R. Wilson et al., DEVELOPMENT OF A WAFER LEVEL TECHNIQUE FOR MONITORING AND CONTROL OF DEPOSITION TEMPERATURE IN HIGH-VACUUM PHYSICAL VAPOR-DEPOSITION TECHNOLOGY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 122-126
Citations number
1
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
1
Year of publication
1997
Pages
122 - 126
Database
ISI
SICI code
1071-1023(1997)15:1<122:DOAWLT>2.0.ZU;2-0
Abstract
Deposition temperatures in the range of 500 degrees C are required for aluminum via fill planarization processes. The control of the deposit ion temperature is a critical factor in achieving consistent via fill planarization. A wafer level technique was developed and proven to be consistent through the operating temperature range to highlight any de viation in the deposition temperature. (C) 1997 American Vacuum Societ y.