CHEMICAL-VAPOR-DEPOSITION OF TISI2 USING AN INDUSTRIAL INTEGRATED CLUSTER TOOL

Selective chemical vapor deposition of TiSi2 for contacts and intercon nects in 0.25 mu m and below design rule devices has been performed fr om TiCl4/DCS/H-2 chemistry using an industrial integrated cluster tool . Selectivity on oxide and nitride and a resistivity of around 16 mu c m have been obtained. The growth rates obtained on doped/undoped, poly /mono Si are almost identical. The grain size on poly Si is around 0.1 0 mu m. Loading effect has been observed and corrected by the gas mixt ure. This chemical vapor deposition (CVD) technique has thus been used in a 0.25 mu m complementary metal-oxide-semiconductor technology and the results are compared with the standard salicide (solid phase reac tion) and elevated source/drain/gate (with selective epitaxy) followed by the salicide, The results show that CVD is a most promising proces s for the 0.2 mu m technology with higher values for the transistor sa turation current. (C) 1997 American Vacuum Society.