ARSENIC IMPLANTATION INTO GAAS - A SOI TECHNOLOGY FOR COMPOUND SEMICONDUCTORS

Solid-phase epitaxial regrowth of As+-implanted GaAs has produced As p recipitates with the same structure and orientation relationship as ha s been observed in annealed GaAs layers grown at low temperature by mo lecular-beam epitaxy. The presence of these precipitates was revealed by transmission electron microscopy. These layers appear to be semi-in sulating. In order to obtain these results, implantation and annealing conditions need to be carefully selected. Annealing of implanted samp les at 600 degrees C for 10, 20 and 30 min does not lead to the undula tion of the sample surface. Therefore any device structures such as se miconductor-on-insulator can be grown on this regrown material.