Dh. Lee et al., ELECTRICAL-CONDUCTIVITY OF THE SOLID-SOLUTIONS XCEO(2)-X)DY2O3 -THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.10((1), Materials chemistry and physics, 37(1), 1994, pp. 17-22
CeO2-doped Dy2O3 systems containing 1, 4, 7 and 10 mol.% CeO2 were fou
nd to be solid solutions by X-ray diffraction techniques. The lattice
parameter a was obtained by the Nelson-Riley method, and its value inc
reased with increasing dopant content. The average residual factors (R
) obtained from X-ray intensity analysis based on oxygen interstitial
and vacancy models were found to be 0.0631 and 0.1085, respectively, s
uggesting the oxygen interstitial model. The ratios of measured to cal
culated densities were found to be greater than 0.96, justifying the o
xygen interstitial model. The results of thermal analysis showed that
no phase transition occurred in the temperature range 500-1100 degrees
C. The electrical conductivity was measured as a function of temperat
ure from 500 to 1100 degrees C and of oxygen partial pressure from 5x1
0(-5) to 2x10(-1) atm. The exponential dependence of the electrical co
nductivity (sigma) on the oxygen partial pressure (P-O2) gives sigma a
lpha P-O2(1/n) with n=6, the main defect and charge carriers being the
oxygen interstitial and the electron hole, respectively.