WRITING IMPLANTATION WITH A HIGH-CURRENT DENSITY FOCUSED ION-BEAM

Authors
BISCHOFF L HESSE E PANKNIN D SKORUPA W TEICHERT J
Citation
L. Bischoff et al., WRITING IMPLANTATION WITH A HIGH-CURRENT DENSITY FOCUSED ION-BEAM, Microelectronic engineering, 23(1-4), 1994, pp. 115-118
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
115 - 118
Database
ISI
SICI code
0167-9317(1994)23:1-4<115:WIWAHD>2.0.ZU;2-I
Abstract
The Rossendorf Focused Ion Beam IMSA-100 was used for writing implanta tion of cobalt (E = 30 keV Co+ and 60 keV Co++; D = 0.5 ... 5 x 10(17) cm(-2)) at room temperature to form CoSi2 microstructures on silicon by ion beam synthesis. For that aim two types of Liquid Alloy Ion Sour ses (LAIS) were developed. As implanted and annealed (600 degrees C fo r 60 min and 1000 degrees C for 30 min in N-2 atmosphere) silicide str uctures were analysed by SEM, EDX and electrical measurements.