FIB REPAIR OF RETICLE DEFECTS WITH ANTISTAINING-EFFECTS ON OPTICAL LITHOGRAPHY FROM G-LINE TO DUV

Citation
Pd. Prewett et al., FIB REPAIR OF RETICLE DEFECTS WITH ANTISTAINING-EFFECTS ON OPTICAL LITHOGRAPHY FROM G-LINE TO DUV, Microelectronic engineering, 23(1-4), 1994, pp. 127-130
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
127 - 130
Database
ISI
SICI code
0167-9317(1994)23:1-4<127:FRORDW>2.0.ZU;2-I
Abstract
Focused ion beam repair of opaque defects in photomasks and reticles h as significant advantages over laser repair methods. The technique can however leave residual defects due to metal ion stains and other dama ge. A single step plasma etch antistain process has therefore been dev eloped. However, by using an optimised approach to the FIB etch stage, post repair stain effects can be eliminated without the need for post repair antistaining. The effectiveness of the FIB repair method is de monstrated through wafer exposure trials using repaired reticles at G- Iine, I-line and DUV wavelengths.