Pd. Prewett et al., FIB REPAIR OF RETICLE DEFECTS WITH ANTISTAINING-EFFECTS ON OPTICAL LITHOGRAPHY FROM G-LINE TO DUV, Microelectronic engineering, 23(1-4), 1994, pp. 127-130
Focused ion beam repair of opaque defects in photomasks and reticles h
as significant advantages over laser repair methods. The technique can
however leave residual defects due to metal ion stains and other dama
ge. A single step plasma etch antistain process has therefore been dev
eloped. However, by using an optimised approach to the FIB etch stage,
post repair stain effects can be eliminated without the need for post
repair antistaining. The effectiveness of the FIB repair method is de
monstrated through wafer exposure trials using repaired reticles at G-
Iine, I-line and DUV wavelengths.