RESIST THICKNESS INFLUENCE ON DEPTH OF FOCUS - A KEY QUESTION FOR ADVANCED I-LINE AND DUV LITHOGRAPHY

Authors
BOETTIGER U FISCHER T GRASSMANN A MORITZ H REUHMANHUISKEN M
Citation
U. Boettiger et al., RESIST THICKNESS INFLUENCE ON DEPTH OF FOCUS - A KEY QUESTION FOR ADVANCED I-LINE AND DUV LITHOGRAPHY, Microelectronic engineering, 23(1-4), 1994, pp. 163-166
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
163 - 166
Database
ISI
SICI code
0167-9317(1994)23:1-4<163:RTIODO>2.0.ZU;2-V
Abstract
Motivated by a dramatically shrinking depth of focus as device geometr ies approach 0.25 um and the increasing importance of resist thickness as part of the focus budget, this paper summarizes experimental depth of focus results obtained at various resist thicknesses with differen t resist types.