NEW EXPOSURE METHOD FOR SR LITHOGRAPHY - COMBINATION OF SCANNING MIRROR AND ELECTRON-BEAM WOBBLING

Authors
MAEJIMA Y AWAJI N
Citation
Y. Maejima et N. Awaji, NEW EXPOSURE METHOD FOR SR LITHOGRAPHY - COMBINATION OF SCANNING MIRROR AND ELECTRON-BEAM WOBBLING, Microelectronic engineering, 23(1-4), 1994, pp. 193-196
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
193 - 196
Database
ISI
SICI code
0167-9317(1994)23:1-4<193:NEMFSL>2.0.ZU;2-E
Abstract
A new exposure method, which provides both high X-ray intensity and do se uniformity in a large exposure field for SR lithography, is discuss ed. This method uses a scanning mirror method and electron beam wobbli ng in combination in SR beamlines. Simulation results show that dose u niformity of less than or equal to +/-2% will be achieved in the 50-mm -square exposure field by this method. The advantage of this method wa s confirmed by experiments in the 25-mm-square field.