ULTRASONIC SUPPORTED DEVELOPMENT OF IRRADIATED MICROSTRUCTURES

Citation
A. Elkholi et al., ULTRASONIC SUPPORTED DEVELOPMENT OF IRRADIATED MICROSTRUCTURES, Microelectronic engineering, 23(1-4), 1994, pp. 219-222
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
219 - 222
Database
ISI
SICI code
0167-9317(1994)23:1-4<219:USDOIM>2.0.ZU;2-8
Abstract
In the first step of the LIGA process a resist layer typically PMMA (p olymethyl-methacrylate), is patterned by deep etch x-I-ay lithography. Then the exposed parts are dissolved by an organic developer. In orde r to achieve perfect microstructures, the development must. be free of residues, especially, with a view to the following electroforming ste p. In case of microstructures with extreme aspect ratios the developme nt process is not only a problem of solubility- but also of transporta tion. Our studies have proved that the development process can be impr oved through application of ultrasound, especially if the power densit y is raised or the frequency is lowered, because in both cases the amo unt of transient cavitation rises, with the restriction imposed that f ragile microstructures might be destroyed. Therefore, the development parameters need to be optimised for each geometry.