ADHESION PROBLEMS IN DEEP-ETCH X-RAY-LITHOGRAPHY CAUSED BY FLUORESCENCE RADIATION FROM THE PLATING BASE

Authors
PANTENBURG FJ CHLEBEK J ELKHOLI A HUBER HL MOHR J OERTEL HK SCHULZ J
Citation
Fj. Pantenburg et al., ADHESION PROBLEMS IN DEEP-ETCH X-RAY-LITHOGRAPHY CAUSED BY FLUORESCENCE RADIATION FROM THE PLATING BASE, Microelectronic engineering, 23(1-4), 1994, pp. 223-226
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
223 - 226
Database
ISI
SICI code
0167-9317(1994)23:1-4<223:APIDXC>2.0.ZU;2-9
Abstract
During the irradiation with synchrotron radiation, electrons and fluor escence photons are created in those regions of the plating base which are underneath the absorbers. This secondary radiation damages the re sist at the interface to the plating base and may lead to bad adhesion after development. Experiments at BESSY I (epsilon(c) = 0.6 keV) and ELSA (epsilon(c) = 1.4 and 2.5 keV) and corresponding Monte Carlo simu lations are presented for 20 mu m resist layers on a gold plating base .