A mask technique using a thin (350 nm) e-beam resist layer and Au elec
tro pulsplating is presented. Isolated absorber lines of 80 nm in size
have been successfully fabricated, The absorber lines have been repli
cated in 300 nm thick PMMA using synchrotron radiation. Mask bias and
dose latitude values have been determined for sub-150 nm absorber line
s and compared with calculated data.