NANOSTRUCTURE PATTERNING WITH SOR X-RAY-LITHOGRAPHY

Authors
CHLEBEK J HUBER HL OERTEL HK REIMER K
Citation
J. Chlebek et al., NANOSTRUCTURE PATTERNING WITH SOR X-RAY-LITHOGRAPHY, Microelectronic engineering, 23(1-4), 1994, pp. 227-230
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
227 - 230
Database
ISI
SICI code
0167-9317(1994)23:1-4<227:NPWSX>2.0.ZU;2-P
Abstract
A mask technique using a thin (350 nm) e-beam resist layer and Au elec tro pulsplating is presented. Isolated absorber lines of 80 nm in size have been successfully fabricated, The absorber lines have been repli cated in 300 nm thick PMMA using synchrotron radiation. Mask bias and dose latitude values have been determined for sub-150 nm absorber line s and compared with calculated data.