180NM GATE-LENGTH HEMTS USING COMPLETE X-RAY-LITHOGRAPHY PROCESSING

Authors
HAGHIRIGOSNET AM LAFONTAINE H JIN Y ROUSSEAUX F DECANINI D CARCENAC F RAVET MF THIERRYMIEG V CHAKER M PEPIN H LAUNOIS H
Citation
Am. Haghirigosnet et al., 180NM GATE-LENGTH HEMTS USING COMPLETE X-RAY-LITHOGRAPHY PROCESSING, Microelectronic engineering, 23(1-4), 1994, pp. 243-246
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
243 - 246
Database
ISI
SICI code
0167-9317(1994)23:1-4<243:1GHUCX>2.0.ZU;2-L
Abstract
This paper reports on the first achievement of sub-200nm gate length G aAlAs/GaAs HEMTs produced by x-ray lithography. The chemical amplified SAL601 resist process is optimized with a post-exposure bake (FEB) at 95 degrees C for the replication of very narrow and isolated trenches (gates). The fabricated transistors have gate lengths of 180nm.