SELF-ASSEMBLY - ITS USE IN AT-THE-SURFACE IMAGING SCHEMES FOR MICROSTRUCTURE FABRICATION IN RESIST FILMS

Citation
Gn. Taylor et al., SELF-ASSEMBLY - ITS USE IN AT-THE-SURFACE IMAGING SCHEMES FOR MICROSTRUCTURE FABRICATION IN RESIST FILMS, Microelectronic engineering, 23(1-4), 1994, pp. 259-262
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
259 - 262
Database
ISI
SICI code
0167-9317(1994)23:1-4<259:S-IUIA>2.0.ZU;2-O
Abstract
The self-assembly of refractory films on organic resist surfaces is us ed to provide an etching mask during the plasma transfer of patterns t hrough underlying organic resists. Multilayer self-assembly using ZrOC l2 and H4P2O7 reagents affords multilayer structures that are selectiv ely bound to oxidized resist layers. imaging is achieved using phenoli c resin materials that are exposed to 193 nn radiation.