SUBMICRO- AND NANOMETER E-BEAM LITHOGRAPHY AND REACTIVE ION ETCHING WITH SINGLE-LAYER CHEMICALLY AMPLIFIED NEGATIVE RESIST

Authors
RANGELOW IW HUDEK P KOSTIC I BORKOWICZ Z STANGL G
Citation
Iw. Rangelow et al., SUBMICRO- AND NANOMETER E-BEAM LITHOGRAPHY AND REACTIVE ION ETCHING WITH SINGLE-LAYER CHEMICALLY AMPLIFIED NEGATIVE RESIST, Microelectronic engineering, 23(1-4), 1994, pp. 283-286
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
283 - 286
Database
ISI
SICI code
0167-9317(1994)23:1-4<283:SANELA>2.0.ZU;2-S
Abstract
In this article we present results of Electron-Beam Lithographic (EBL) and Reactive Ion Etching (RIE) experiments on a single layer chemical ly amplified novolak-based negative 3-Component resist System (3CS). T he resist type used was AZ PN114 from HOECHST AG. Direct, shaped-EBL g enerated single-layer resist-relief structures at 0,1 mu m and below w ere RIE and RIE with magnetic enhancement transferred (i) into bulk si licon and GaAs substrates and (ii) in 400 nm Nb - layer on SiO2/Si.