NEW MICROLITHOGRAPHY TECHNOLOGIES BASED ON RESIST IRRADIATION BY LOW-ENERGY ELECTRONS

Authors
KUDRYASHOV VA BORZENKO TB KRASNOV VV ARISTOV VV
Citation
Va. Kudryashov et al., NEW MICROLITHOGRAPHY TECHNOLOGIES BASED ON RESIST IRRADIATION BY LOW-ENERGY ELECTRONS, Microelectronic engineering, 23(1-4), 1994, pp. 307-310
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
307 - 310
Database
ISI
SICI code
0167-9317(1994)23:1-4<307:NMTBOR>2.0.ZU;2-2
Abstract
A new low energy electron irradiation based technology to produce self alignment submicron structures in microlithography is proposed. Its ma in characteristic features are, first, the transformation of the influ ence direction from perpendicular to the surface to lateral to it and, second, the penetration depth of the radiation into the resist is muc h smaller than the resist structure width and height and is equal to t he features size to be formed.