PERFORMANCE DATA OF AN ENVIRONMENTALLY STABLE DEEP UV POSITIVE RESIST

Citation
T. Fischer et al., PERFORMANCE DATA OF AN ENVIRONMENTALLY STABLE DEEP UV POSITIVE RESIST, Microelectronic engineering, 23(1-4), 1994, pp. 311-314
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
311 - 314
Database
ISI
SICI code
0167-9317(1994)23:1-4<311:PDOAES>2.0.ZU;2-8
Abstract
In this paper we describe the lithography performance of a chemically amplified positive DUV resist named ''SUCCESS-ST2'' from BASF [2]. The resist consists of three components. A polymer component which provid es good etching resistance, a molecular component which combines the f unctions of the photoacid generator and the dissolution change agent a nd a contrast enhancement additive. Specifically time delay effects, p rocess window, printing quality over poly-Si steps and etch performanc e are investigated.