In this paper we describe the lithography performance of a chemically
amplified positive DUV resist named ''SUCCESS-ST2'' from BASF [2]. The
resist consists of three components. A polymer component which provid
es good etching resistance, a molecular component which combines the f
unctions of the photoacid generator and the dissolution change agent a
nd a contrast enhancement additive. Specifically time delay effects, p
rocess window, printing quality over poly-Si steps and etch performanc
e are investigated.