NEW NEGATIVE TONE RESISTS FOR SUBHALF MICRON LITHOGRAPHY

Citation
H. Sachdev et al., NEW NEGATIVE TONE RESISTS FOR SUBHALF MICRON LITHOGRAPHY, Microelectronic engineering, 23(1-4), 1994, pp. 321-326
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
321 - 326
Database
ISI
SICI code
0167-9317(1994)23:1-4<321:NNTRFS>2.0.ZU;2-V
Abstract
New crosslinking type resist systems are described which use benzylic carbocation precursors carrying phenolic hydroxy group. The special fe ature of the new resists is the versatility of applications, ease of s ynthesis, high sensitivity, high contrast and a large process window. One such resist system has been used success fully in the back-end-of- the-line personalization for manufacturing advanced bipolar devices wh ich required an exceptionally large process window. The new resist sys tem is a promising candidate for surface imaging as well as for I-line , DUV and X-Ray applications.