ION-BEAM ETCHING MECHANISM OF PMMA BASED RESISTS BY NOBLE-GAS IONS

Authors
BORZENKO TB KOVAL YI KUDRYASHOV VA
Citation
Tb. Borzenko et al., ION-BEAM ETCHING MECHANISM OF PMMA BASED RESISTS BY NOBLE-GAS IONS, Microelectronic engineering, 23(1-4), 1994, pp. 337-340
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
337 - 340
Database
ISI
SICI code
0167-9317(1994)23:1-4<337:IEMOPB>2.0.ZU;2-0
Abstract
A model of resist ion beam etching (IBE) by noble gases ions is sugges ted. It is based on data of the influence of ion and electron irradiat ion on the properties of PMMA-based resists. PMMA resistance to IBE af ter such an irradiation is under investigation. In accordance with the proposed model in addition to physical sputtering, radiation induced processes make a considerable contribution to IBE of polymer resists.