NEARLY DAMAGE-FREE DRY-ETCHING OF ALGAINP GAINP BY ELECTRON-CYCLOTRON-RESONANCE TECHNIQUE/

Authors
HOMMEL J SCHNEIDER F MOSER M GENG C SCHOLZ F SCHWEIZER H
Citation
J. Hommel et al., NEARLY DAMAGE-FREE DRY-ETCHING OF ALGAINP GAINP BY ELECTRON-CYCLOTRON-RESONANCE TECHNIQUE/, Microelectronic engineering, 23(1-4), 1994, pp. 349-352
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
349 - 352
Database
ISI
SICI code
0167-9317(1994)23:1-4<349:NDDOAG>2.0.ZU;2-2
Abstract
A nearly damage-free dry etching process in the material system AlGaIn P/GaInP is demonstrated. An electron cyclotron resonance (ECR) ion sou rce has been used for plasma excitation. Photoluminescence spectroscop y at varying excitation power densities and sample temperatures is use d to measure the degree of damage.