VOLTAGE MEASUREMENTS ON INTEGRATED-CIRCUITS USING A TIME-OF-FLIGHT ELECTRON SPECTROMETER

Citation
Ar. Dinnis et A. Khursheed, VOLTAGE MEASUREMENTS ON INTEGRATED-CIRCUITS USING A TIME-OF-FLIGHT ELECTRON SPECTROMETER, Microelectronic engineering, 23(1-4), 1994, pp. 395-398
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
395 - 398
Database
ISI
SICI code
0167-9317(1994)23:1-4<395:VMOIUA>2.0.ZU;2-Z
Abstract
The time-of-flight (TOF) electron spectrometer offers significant adva ntages in terms of speed of data-acquisition over the retarding-field spectrometer commonly used in electron-beam test (EBT) machines. It me asures the time taken for a short pulse of secondary electrons to trav el from the specimen surface to a fast microchannel plate detector pla ced some way up the electron-optical column. Results are presented for an experimental setup based on a standard scanning electron microscop e column with an additional ''single-pole'' final lens which allows a relatively large unobstructed working distance above the specimen. Met hods for the rapid extraction of quantitative voltage data are describ ed.