Ar. Dinnis et A. Khursheed, VOLTAGE MEASUREMENTS ON INTEGRATED-CIRCUITS USING A TIME-OF-FLIGHT ELECTRON SPECTROMETER, Microelectronic engineering, 23(1-4), 1994, pp. 395-398
The time-of-flight (TOF) electron spectrometer offers significant adva
ntages in terms of speed of data-acquisition over the retarding-field
spectrometer commonly used in electron-beam test (EBT) machines. It me
asures the time taken for a short pulse of secondary electrons to trav
el from the specimen surface to a fast microchannel plate detector pla
ced some way up the electron-optical column. Results are presented for
an experimental setup based on a standard scanning electron microscop
e column with an additional ''single-pole'' final lens which allows a
relatively large unobstructed working distance above the specimen. Met
hods for the rapid extraction of quantitative voltage data are describ
ed.