LITHOS - A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR

The simulation tool presented in this paper is used for resist exposur e and development in electron beam lithography. The novel feature is t hat first, the electron distribution function is evaluated from the Bo ltzmann transport equation which is solved with suitable boundary cond itions. Then, the energy deposition function (EDF) necessary in the ex posure and development stages, follows. The program has been tested in the case of resist layers on a multi-component substrate for electron beams in the range 10-50KeV and it has been proved much faster than t he Monte-Carlo approach.