R. Bergmann et al., INVESTIGATION OF BOUNDARY SCATTERING IN DRY-ETCHED QUANTUM WIRES BY ARTIFICIAL MANIPULATION OF THE WIRE BOUNDARIES, Microelectronic engineering, 23(1-4), 1994, pp. 429-432
An optimized fabrication technology for quantum wires with less side w
all scattering needs the understanding how to minimize the scattering
mechanisms. We have used magneto transport measurements as a sensor to
observe the influence of the dry etching process and the etch mask de
finition process on the quality of the wire boundaries. The effect of
surface roughness, the distribution and density of etch induced scatte
ring centers due to the wire definition process was investigated by an
artificial manipulation of the wire boundaries. Side wall damage can
be minimized using a low damage electron cyclotron resonance reactive
ion beam etching process and a minimal electron beam scanning step for
the etch mask exposure.