METALLIZATION OF SUBMICRON MICROWAVE BIPOLAR-TRANSISTORS BY ELECTROPLATING

Authors
WEBSTER MN TUINHOUT A LOCHEL B VERBRUGGEN AH ROMIJN J VANDERDRIFT E RADELAAR S JOS HFF MOORS PMA
Citation
Mn. Webster et al., METALLIZATION OF SUBMICRON MICROWAVE BIPOLAR-TRANSISTORS BY ELECTROPLATING, Microelectronic engineering, 23(1-4), 1994, pp. 441-444
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
23
Issue
1-4
Year of publication
1994
Pages
441 - 444
Database
ISI
SICI code
0167-9317(1994)23:1-4<441:MOSMBB>2.0.ZU;2-J
Abstract
Electroplating is used to make dense Au metallization patterns with di mensions smaller than 0.5 mu m in microwave bipolar transistors. The s tructures are grown in by electron beam lithography defined patterns i n PMMA resist spun on top of a Ti/TiW-N/TiW/Au plating base. Test patt erns consisting of 110 nm wide lines having a height of 500 nm are rea dily obtained. Transistors with an emitter width as small as 0.3 mu m show good performance.