HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY FOR FABRICATING VISIBLE SEMICONDUCTOR-LASERS WITH CURVED MIRRORS AND INTEGRATED HOLOGRAMS

Red-emitting (Al)GaInP semiconductor laser diodes with dry-etched mirr or facets have been fabricated using chemically assisted ion-beam etch ing. These devices operate single mode up to CW output powers of 30 mW . Their properties are comparable to those of lasers with cleaved mirr ors. Additionally, lasers with concave and convex facets have been rea lized using high-resolution electron-beam lithography to define the mi rror shapes. The horizontal far-field behavior of the laser is influen ced by varying the shape of the facets. The same technology can be use d for integrating computer-generated holograms working as focussing gr ating couplers.