Jd. Hayden et al., A NEW TECHNIQUE FOR FORMING A SHALLOW LINK BASE IN A DOUBLE POLYSILICON BIPOLAR-TRANSISTOR, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 63-68
A new technique is presented for forming a shallow link base in a doub
le polysilicon bipolar transistor. This method is easily integrated in
to an advanced BICMOS process, making use of a disposable polysilicon
spacer technology for MOSFET LDD formation. This new scheme allows ind
ependent optimization of active and link base regions while providing
improvements in base-emitter breakdown and resistance to bipolar hot c
arrier degradation.