A NEW TECHNIQUE FOR FORMING A SHALLOW LINK BASE IN A DOUBLE POLYSILICON BIPOLAR-TRANSISTOR

Authors
HAYDEN JD BURNETT JD PFIESTER JR WOO MP
Citation
Jd. Hayden et al., A NEW TECHNIQUE FOR FORMING A SHALLOW LINK BASE IN A DOUBLE POLYSILICON BIPOLAR-TRANSISTOR, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 63-68
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
1
Year of publication
1994
Pages
63 - 68
Database
ISI
SICI code
0018-9383(1994)41:1<63:ANTFFA>2.0.ZU;2-4
Abstract
A new technique is presented for forming a shallow link base in a doub le polysilicon bipolar transistor. This method is easily integrated in to an advanced BICMOS process, making use of a disposable polysilicon spacer technology for MOSFET LDD formation. This new scheme allows ind ependent optimization of active and link base regions while providing improvements in base-emitter breakdown and resistance to bipolar hot c arrier degradation.